ABSTRACT
The fully depleted silicon on insulator (FDSOI) technology targets high speed at low operation voltage to reduce power consumption and to reduce the energy gap between battery energy supply and smart handheld system energy needs. FDSOI is an evolutionary innovation because it has the advantage of being a planar transistor that can use the existing design and electronic design automated tools for early time to market and is a cost-effective solution for consumer electronic applications. FDSOI devices on an ultrathin buried oxide (UTBOX) address a major challenge of the undoped channel devices, that is, to fabricate a multiple threshold voltage (VT), requirement for system-on-chip application. The ultrathin body and thin BOX devices feature the multi VT option with simpler integration by using the combination of a top gate work function and a ground-plane doping type. Multi VT capability is required to optimize performance and power for improving the energy efficiency of the integrated circuits chips for mobile application.
