ABSTRACT
In this chapter, the present status of the transistor variability is reviewed. In particular, the random variability and its impact on static random access memory (SRAM) are described. As a solution to the variability issue, a fully-depleted (FD) siliconon-insulator (SOI) transistor with intrinsic channel is described. A new concept for the suppression of random variability in SRAM is also introduced.
