ABSTRACT
The silicon industry depends heavily on a ready supply of good-quality silicon wafers for processing integrated circuits. Typical specications depend on various physical parameters, such as wafer diameter, thickness, degree of atness, mechanical defects, crystallographic orientation, crystal defect and dislocation density, and polishing. Electrical parameters include dopant type, dopant impurity, resistivity range, and the level of unintentional impurities, in particular, oxygen, carbon, and iron. Other parameters will depend upon the specic application.
