ABSTRACT
This compound could also be obtained if K4Ge4Se10 and two equivalents of C12H25NMe3Br were dissolved in H2O/MeOH (ca. 20 mL; 1:1 volume ratio) and heated to 50°C-60°C to give a yellow solution (Wachhold et al. 2000a,b). The solution of HgCl2 in H2O (100 mL) was slowly added to this mixture under vigorous stirring, which led to the immediate precipitation of the product. The isolation and purication were the same as for the rst method. (C12H25NMe3)2[HgGe4Se10] is a wide band gap semiconductor.
