ABSTRACT
In the nanometer regime, the traditional copper-based interconnect system foresees a threat due to its increased resistivity and susceptibility to electromigration. The increased resistivity not only causes increase in delay through signal interconnects, but also poses a serious concern in power interconnects. The higher resistance causes large power supply voltage drop (typically known as IR drop) in the power distribution networks (PDNs), which in turn has adverse effects on signal timing. The fast signal switching and increased inductance of the interconnects (Ldi/dt) put together creates simultaneous switching noise (SSN) on the power nets.
