ABSTRACT
The ever-increasing demand for more circuit components on a single chip requires aggressive scaling of electronic devices and their interconnects. This demand has resulted in many low-dimensional issues. Carbon nanotube (CNT) and more recently graphene have shown exciting electrical properties which can be utilized in making nanoelectronic devices and their interconnects. As the interconnect lateral dimensions are approaching the mean free path of copper (40 nm at room temperature), the grain boundary scattering together with surface scattering leads to rapid increase in the resistivity. Apart from this, the increased susceptibility to electromigration has become a major challenge in nanometric dimensions.
