ABSTRACT
This chapter presents the basic features of tunnel field-effect-transistors (TFET) device structure. It introduces the emerging devices as the potential alternatives for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Similar to metal-oxide-semiconductor field-effect transistors (MOSFETs), the gate control of the channel in TFETs can be improved by using double-gate (DG) structures. The scaling rule for TFETs is different from that of the MOSFETs in which many parameters must be scaled simultaneously to keep the same electric field throughout the device. In order to model TFETs with coupled transports, a TFET device can be represented by an ideal TFET in series with a drift-diffusion MOSFET at the drain side of the device. Among the potential beyond-CMOS devices, the devices that compete directly with the MOSFETs in power, area, and speed in the commercial temperature range 0°C–75°C and can utilize the existing CMOS facility are of special interest to device technologists and IC manufacturers.
