ABSTRACT
This chapter presents compact models for the emerging ultrathin-body field-effect-transistors (FET). The continuous miniaturization of the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) devices has become more challenging at the same rate of Moore’s law due to several fundamental device-physics constraints such as short channel effects. Quantum mechanical confinement of inversion carriers is well known in bulk MOSFETs for a long time. This carrier confinement, also known as electrical confinement, leads to splitting of energy bands into discrete sub-bands, which reflects as an increase in the threshold voltage of the transistor and a decrease in the gate capacitance, both of which act to reduce the current drive of the transistor. The chapter intends to provide readers the present state-of-the-art modeling activities in thin-body FET devices. The detailed models and modeling methodologies including updates can be found in the literature.
