ABSTRACT
By scaling law, the essential component of modern integrated circuits, the Si-based complementary metal-oxide semiconductor (CMOS) eld eect transistor, has become much smaller in size now to about 10 nm with reduction in the number of features [1-3]. Yet this “cheap way to do electronics,” as pointed out by Moore [4], has many challenges in sight such as large leakage current [5,6], sizeable parasitic resistance [7], and exponential increase of circuit power density in chips with billions of transistors as shown in Figure 5.1 [8]. To combat these challenges, many emerging technologies arise
Emerging Spintronics ................................................................................. 139 5.2 Spin Manipulation with Magnetoelectric Coupling ............................. 143
5.2.1 Ferroelectric Field Eect ............................................................... 143 5.2.2 Strain-Mediated Coupling ........................................................... 146 5.2.3 Tuning the Magnetic Exchange Eect........................................ 149 5.2.4 Other Systems and Eects ............................................................ 149
5.3 Spintronics with Multiferroics: Prototype Devices ............................... 153 5.4 Conclusion and Outlook ............................................................................ 158 Acknowledgments ................................................................................................. 158 References ............................................................................................................... 158
with potential improvements over conventional Si-based transistors. From the materials aspect, eorts have been focused on other channel materials with better transport properties such as Ge [9], III-V compounds [10], carbon nanotube [11], and so on. From the device engineering aspect, new designs such as three-dimensional FinFET [12], high dielectric constant gate dielectrics [13], quantum electronic devices (QED) [14], and single electron transistors (SET) [15] have been proposed.
