ABSTRACT
This chapter describes the principal structure of a field effect transistor, the elements in the family of the field effect transistor, and the advantages and shortcomings of classes of transistor. It explains the correspondence between a bipolar junction transistor and field effect transistor (FET) terminals. The chapter explores FET, junction FET (JFET), metal-oxide semiconductor field effect transistor (MOSFET), and the difference between D-MOSFET and E-MOSFET. It also details the insulated gate bipolar transistor (IGBT), thyristor, silicon-controlled rectifier (SCR), and integrated gate-commutated thyristor (IGCT). The chapter presents the correct bias conditions for the aforementioned devices. The simple diode does function according to the condition provided by the circuit it is connected to and as far as these conditions correspond to its operational range. In comparison, the new diode (rectifying element) is electronically switchable and can be turned on and off.
