ABSTRACT
It is safe to say that all semiconductors used for commercial light-emitting diodes (LEDs) and laser diodes (LDs) are produced from Ill-V compound thin films gro'\'\'n using the metalorganic chemical vapor deposition (MOCVD) technique. And while it is relative easy to mix the group III elements (AI, Ga, and In) to produce ternary and quaternary compounds, it is much harder to mix the group V elements (Sb, As, P and N). Thus, currently used III-V compounds can be grouped into the families of the antimonides, arsenides, phosphides and nitrides. The first three have a predominantly cubic lattice structure, while the nitrides tend to have a hexagonal lattice structure.
