ABSTRACT
ABSTRACT: Lateral-and pendeo-epitaxy were used to grow GaN and AlxGaJ-xN films on SiC/AlN and Si/SiC/AIN substrates either from GaN stripes contained within windows of an Si02 mask or from side walls of GaN seed structures containing SbN4 top masks. Scanning and transmission electron microscopies and atomic force microscopy were used to evaluate the microstructure, the dislocation distribution and the surface roughness of the films. These regions contained a low density of dislocations. The RMS roughness of the ( 1120) sidewall plane of the pendeo-epitaxial structures was approximately 0.1 run.
