ABSTRACT
ABSTRACT: EFfEM was used for cross-sectional on-product characterization in CMOS structures. The investigations of TiffiN adhesion layers and diffusion barriers reveal the possibility of distinguishing clearly between these functional layers with high lateral resolution. Defect analysis concerning the formation of Ti-Al intermetallic phases at grain boundaries and at TiNffi/ AI interfaces were performed by EFfEM. The investigation of the influence of a cap layer on Co silicide formation reveals the formation of SiO, at the CoSi2 surface for samples without a cap layer on top of Co, which verifies the benefit of a cap layer for CoSh formation.
