ABSTRACT
ABSTRACT: Using a scanning capacitance microscope (SCM) we have studied cross-sectioned n-and p-MOSFETs with gate lengths approaching 60 nm. In a homogeneous semiconductor, the SCM measures the depletion length, determining the dopant concentration. When imaging a real device there is an interaction between the probe tip and the built-in depletion of the p-n junction. Using a device simulator we can understand the relation between the SCM images and the position of the p-n junction, making the SCM a quantitative tool for junction delineation and direct measurement of the electrical channel length.
