High speed InP-based heterojunction bipolar transistors S Long and A Gossard 2

doi:10.1201/9781482268980-10

ABSTRACT

Lester F. Eastman, V. Tilak, J. Smart(1), B. Green(2, A. Vertiatchikh, N. Weimann(3), O. Ambacher(4), E. Chumbes(5), H. Kim, T. Prunty, J.H. Hwang, W.J. Schaff, B.K. Ridley(6), and J.R. Shealy, V. Kaper.