ABSTRACT
All samples used in this study were grown by MOVPE. Trimethylaluminum, trimethylgallium and trimethylindium were used as group-III source gases, and ammonia was used as the group V source gas. A (0001) sapphire substrate was used. AlInN/GaN 5SLs were grown at 800 °C using N2 carrier gas. The SLs were grown on GaN of 2pm-thickness grown at 1050°C, which followed the low-temperature deposition of AIN buffer layer of 30nm-thickness. In content in AlInN was 0.1. Typical thicknesses of Al0.90In0.10N/GaN and GaN were 1 nm and 5 nm, respectively. X-ray diffraction analysis of 2θ/ω scan and reciprocal space mapping were per formed.
