ABSTRACT
The possibilities of using not only the charge but also the spin of electrons in advanced semiconductor devices has recently fueled the research efforts on ferromagnet-semiconductor (FM-SC) hybrid structures. Applying the two allowed spin states (+1/2 and -1/2) of electrons to carry and store information, in addition to the charge, makes feasible the development of novel functionalities in these spintronic devices with the prospects of higher speed and lower power consumption [1]. The main hurdle to realize spintronic devices has been the problem of electrical injection of electrons with controlled spin alignment at room temperature. The challenge for materials engineering is to monolithically integrate, e.g. by epitaxy, suitable ferromagnets and semiconductors with well ordered heterointerfaces which allow undistorted spin injection from the ferromagnetic layer into the semiconductor heterostructure.
