Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped «-GaAs Prepared by Intermittent Injection of TMG and AsH3

Persistent photoconductivity (PPC) phenomenon was first appeared in CdS [1] in 1962 and nonstoichiometric CdTe [2] in 1964 respectively, then PPC for AlGaAs was reported in 1977[3]. PPC phenomenon has been considered as the footnote of the DX center [4,5] in AhGa^As (x>0.22). However, recent investigations have revealed PPC phenomenon in wide variety of materials such as GaN [6,7], ZnSe [8], C60-doped poly(3-alkylthiophene)[9], InAs quantum dot[10], a-Si:H[ll] and even in GaAs.