ABSTRACT
In quantum well (QW) structures with different well thicknesses separated by sufficiently thick barriers, the confined electron and hole states in each well are considered to be independent. Therefore, the relevant emission properties of each well should exhibit an independent characteristic without any correlation between the QWs. However, complex photoluminescence (PL) and PL excitation spectra have been reported in recent studies of electrically isolated QWs [1-3], suggesting that the QWs are by no means independent with respect to exciton formation (carrier relaxation and capture) and radiative recombination. In this contribution, the effect of different cladding layer configurations on the PL properties is studied in two samples containing
three GaAs QWs embedded in Alo.17Gao.83As barriers using steady-state and timeresolved PL experiments as a function of lattice temperature (7).
