ABSTRACT
Decoherence in semiconductor quantum dots (QDs) is one of the main focal points in nanostructure research both from the fundamental aspect of understanding dephasing processes and the challenging application in quantum information processing. This interest comes from the expected inhibition of the inelastic and elastic scattering processes for carriers in QDs [1,2]; the three dimensional quantum confinement in these artificial nanostructures leads to a discretization of the energy spectrum and to the suppression of the continuum of final electronic states. The expected long decoherence time (72) and reciprocally narrow linewidth T (T = 2 /2/ 72) of the discrete QD levels make semiconductor QDs very promising for cavity quantum electrodynamics experiments in solid state [3-5] and for quantum information processing [6-9].
