M4.5 Heterostructures incorporated in one-dimensional semiconductor materials and devices

Heterostructure growth applied to wires was first investigated by Hiruma in the 90’s [12] and was recently improved with respect to the sharpness and control of the interfaces [5]. The added advantage of making heterostructured nanowires is the possibility to combine highly lattice-mismatched materials, due to the small cross section of a nanowire allowing the strain to relax radially, without incorporating misfit dislocations. In Fig. 2, InAs and GaAs with a lattice mismatch of 6.7% have been combined without defects.