ABSTRACT
Regarding the QDs, there have been lots of research recently devoted to realizing the predicted potential of zero-dimensional (0D) quantum-confined structures. Because of their unique electronic states (i.e., atomic-like discrete states with a 8-function density of states), QDs are expected to have many interesting and useful properties for optoelectronic device applications. It was 1982 that the concept of the QDs was proposed as artificial atoms for semiconductor laser applications by Arakawa and Sakaki [1]. The semiconductor laser with a QD active region promises ultra low and temperature independent threshold current [1-4], high-frequency modulation with negligible chirping
Figurel. Dependence of threshold current on the lateral size of quantum dots for a GaAs-based laser and GaN-based lasers. Threshold current of large quantum dots effectively corresponds to that of quantum wells.
