ABSTRACT
Composition profiling of III-V semiconductor nanostructures is essential for the study of the growth processes forming them and the prediction of their optical and electronic behaviour. Using cross-sectional scanning tunneling microscopy (X-STM) we have studied the local composition in a number of III-V nanostructures. The local composition in these nanostructures was determined either by simply counting the constituent atoms, measurement of the local lattice constant or measurement of the relaxation of the cleaved surface due to the elastic field of the buried strained nanostructures.
