ABSTRACT
The first attempts to explain the large effects observed in HMAs were based on a dielectric model that predicted highly nonlinear composition dependencies of the band gap for the alloys of semiconductor compounds with very different properties [9]. The model predicted a semiconductor to semi-metal transition in some of the alloys [9,10]. Later, several other theoretical explanations of the large band gap reduction in III-V-N alloys have been also proposed [11-16]. An extensive review of theoretical, experimental and applied aspects of group III-V-N alloys can be found in a series of recently published articles [17].
