ABSTRACT

A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electr

chapter |1 pages

of 4x 10

chapter |8 pages

of the

chapter |19 pages

of exitonic emission

chapter |9 pages

r---r--.--.....----.--.--..---

__J::i=% -c--•-

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of a cw Ar laser. The

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of the Fermi edge states in

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of a given (r,t) cluster can be occupied by any one of

of the (r, t) cluster in

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of AC pairs

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of iron doped structures to control

chapter 9|3 pages

· b

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of the MQW

of the inclusions of the well and barrier constituents. As we show

chapter |6 pages

of double confinement QW structures

A 23% A 19% of strained InGaAs/GaAs QWs on <111>-oriented GaAs substrates of [ 111 ]A strained layers.

chapter 2000|9 pages

A GaAs contact (n+) A Ga

barrier r.. QDs 5000 A GaAs contact (n+) GaAs Substrate (S .1.)

chapter |9 pages

of Coulomb oscillations that

chapter |7 pages

of (a) sample A and (b) sam-

chapter |9 pages

'Netting layer states

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of structure B with a CdSe

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of two lower

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... .

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of magnitude larger than from the n-QWR. The finite contribution

(i,j > 1) in the DQWR. of the optical of the 2D single-particle of the confining potential was extracted from the cross-sectional TEM et'ht and (=e;'h;-) it is 49 meV. The PLE

chapter |2 pages

of the QDs. In an efforts to achieve luminescence

-20 nm and a height of -2 nm are seen. These

chapter |10 pages

&c at the interface

chapter |2 pages

of PECVD ShNis deposited at 300°C to suppress current slump, sometimes called

of various widths, are laid out with gate-

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of the 50 length of the 60

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oft he AlGaN!InGaN structure

of AIGaN/InGaN/GaN HBT structures. of a V -shape defect in the of a base/collector junction

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:? 5

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of breakdown

chapter 50|11 pages

------------------------.

Current In (mA/mm)

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+ J-

chapter 0|9 pages

) was employed

of the

chapter |7 pages

S,) and a polar

2xl0A/cm(row 1), 8xl0' A/cm(row 2), and Jc

chapter |5 pages

~ 0 . 1

chapter |1 pages

of a rectangular grating for an edge-

of different points across the laser of the edge-emitting PCDFB

chapter |5 pages

of two mutually-

of order of the of merit governing the performance

chapter 7|2 pages

..... .......

chapter |7 pages

r -----: ; : : ---.

chapter |3 pages

A./8

chapter |2 pages

sveo

chapter |26 pages

e--

chapter |3 pages

of a video image

chapter |1 pages

of the PL spectra of the emitted radiation along (011) and

of the analyzer. Solid dots are of the interface chemical bonds, we have performed the pumping of the polarization. It is found that the degree of of pumping power in the range of 45 m W to

chapter |24 pages

of the PC spectra as

chapter |2 pages

of the

chapter 1|5 pages

\ I

..., Bt:WJ

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.§. 120

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Author Index

Abdulrhmann S 409 Bowers J E 351, 367 Abe S 21 Boyd E 291 Abrokwah J K 251 Brandt 0 73, 141,431 Aellen T 323, 455 Brauch U 427 Aguilar-Hernandez J 65 Breiter R 339

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YaMH 397

WestK W 223 P 153