ABSTRACT
ABSTRACT: Energy Dispersive X-Ray and Parallel Electron Energy Loss Spectroscopy analyses have been carried out to determine the indium composition fluctuations in InGaN/GaN quantum wells grown by Metal Organic Chemical Vapor Deposition. Information about the chemical composition and indium segregation in the InGaN/GaN system has been obtained. The compositional distribution is not homogeneous along the quantum wells, and indium rich clusters are observed inside the quantum wells.
