ABSTRACT
Fig. 1 is a conventional bright field image of the high-k dielectric stack. Two layers can be seen at the interface: a light amorphous layer and a dark partially crystallised layer that contains Hf. It is not possible to separately identify the Hf02 and HfSiO layers expected to be present. The width of the dark layer, -3nm, is less than the 4.5nm expected for the combined Hf02 and HfSiO layers.
