ABSTRACT
There is currently considerable theoretical and experimental interest in As-doped GaN. Three main reasons motivate such investigations. Firstly, the difference in the native crystal structures of GaAs and GaN and the large difference in their lattice parameters leads to a strong negative bowing of the Ga(As,N) band gap as a function of composition [1,2]. Secondly, As-doped GaN shows very strong room temperature blue emission at -2.6eV, which raises the potential of using this material in blue light emitting diode (LED) applications [3-5]. Thirdly is the possibility of As-stimulated growth ofzincblende GaN in a controlled fashion [6]. In this paper, we report on a TEM investigation of As-doped GaN films grown by PA-MBE that exhibit strong blue emission.
