The structure of uncapped, buried and multiple stacked Ge/Si quantum dots

The formation process and size ordering of Ge dots, produced by gas source molecular beam epitaxy (GSMBE), have been studied thoroughly by AFM and photoluminescence (Mirua et al 2000). Here, we have studied further the. structure properties and formation mechanism of Ge islands as a function of growth temperature, Ge coverage, and Si spacer layer thickness within Ge/Si multilayers by the means of different microscopy techniques.