ABSTRACT
Group III nitrides (AIN,GaN, InN) are wide band gap semiconductors widely used in optoand micro-electronics and, in most of these devices, AIGaN alloys play an important role. The ionization edges observed in electron-energy-loss-spectroscopy (EELS) are the result of transitions of core electrons into unoccupied states. In first approximation, the energy-lossnear-edge-fine-structure (ELNES) can be interpreted as an image of the site-and symmetryprojected density of states (PDOS) which depends strongly on the arrangement and the type of atoms located around the excited atom, i.e. its local environment. Through a systematic study of the changes observed near Nand AI Kedges in AI, Ga1_,N alloys (x = 0, 0.15. 0.46. 0.81, I), the aim of this work is to check how this local environment can influence the near edge fine structure and to determine the relevant parameters which govern these changes.
