ABSTRACT

Abstract. GaAsi_xBix (x<3%) was studied using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm-1 and 214 cm-1. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN-mode) in GaAsN, the phonon mode at 214 cm-1 is identified as originating from the substitutional Bi at the As-site in GaAsBi.