ABSTRACT
Gyungock Kim, Ki Joong Lee, and In Gyoo Kim Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Kajung-dong, Yusong-gu, Taejon 305-350, Korea
Abstract. We present a resonant-cavity type internal RF-gain InGaAs/InAlAs avalanche photodetector, which shows 40 Gbps high speed performance at high DC-gains. The bistability in the frequency response is measured at the onset voltage of the internal RF-gain near the avalanche region. The on-wafer measurement of a device shows 3 dBbandwidth over 36 GHz at gain > 10, resulting 360 GHz of GB product. The on-chip 40 Gbps NRZ operation shows clear eye openings with -80 mV peak-to-peak voltage at high DC-gains over 10.
