ABSTRACT
As one of the candidates for spin injection into III-V materials/structures, MnAs has been extensively studied. Device applications require the fabrication of microscopic MnAs structures, in which ferromagnetism can be significantly suppressed, which is common for all ferromagnetic materials. In this paper, we will present the properties of ferromagnetic GaSb with Mn, which is improved by growth adjustment, and its possibility for spintronics device. In addition to this, we will present magnetic properties of lithographically created MnAs structures and approaches to maintain the robustness of ferromagnetism in MnAs microstructures.
