ABSTRACT
Cheng-Kuo Lin, Jing-Chang Wu, and Yi-Jen Chan Department of Electrical Engineering, National Central University, Chung li, Taiwan 320, R.O.C.
Jenq-Shinn Wu, Yung-Chung Pan, Chung-Chih Tsai and Jiun-Tsuen Lai Procomp Informatics Ltd. HsinChu, Taiwan 300, R.O.C
Abstract. In this study, we inserted an Ino.45Gao.55As pseudomorphic channel inside the wide bandgap Ino.3Alo.7As layer on GaAs substrates to improve carrier confinement and device microwave power performance, as compared with the Ino.3Gao.7As lattice matched ones. The rf output power and power-added efficiency increases from 498 mW/mm to 610 mW/mm, and 37% to 43% under a 2.4 GHz operation for a 1-pm gatelength device. 1
these results were compared with the lattice matched (LM) Ino.3Gao.7As/Ino.3Alo.7As mHEMTs.
