ABSTRACT
K H Kim1, J Y Yi1, H J Lee1, M Yang1, H S Ahn*1, C R Cho12, S W Kim3, Y Honda4, M Yamaguchi4, N Sawaki4 1 Department of Applied Sciences, Korea Maritime University, Busan 606-791, Korea 2 Busan Branch, Korea Basic Science Institute, Busan 609-735, Korea 3 Department of Physics, Andong National University, Andong 760-749, Korea 4 Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
Abstract. The mixed-source hydride vapor phase epitaxy (HVPE) growth of AlGaN layer is performed on AI2O3 substrate. The AlGaN layer is studied by X-ray diffraction (XRD) measurement, Auger electron spectroscopy (AES) analysis and cathodoluminesecence (CL) spectrum to characterize the structural and optical properties. The A1 composition estimated by the XRD measurement is 30 %. The room temperature CL spectrum exhibits a weak peak at 323 nm.
