ABSTRACT
Abstract. Room temperature lasing at 1.53 pm has been achieved from InGaAs/InGaAsP/InP quantum dot (QD) lasers. The round dome-shaped QDs were grown on (001) InP with an areal density as high as 1 x 1011 cm"2. The ridge waveguide laser diodes with three stack QDs lased up to 330 K with characteristic temperatures of 61 K at room temperature. Broad area lasers with QDs of 5, 7 and 10 stacks lase at 1.53 pm with a threshold current density per QD stack of -430 A/cm2.
