ABSTRACT
Photocurrents were measured on 400 um-diameter mesa diodes formed by standard photolithography. Indium contacts to rt-ZnSe were annealed at 250°C under N2 atmosphere for 30 minutes to ensure ohmicity. This annealing process also increases Tc of Gai_xMnxAs. Ohmic contacts to Gai_xMnxAs were also made by indium after the annealing. I-V characteristics at various temperatures were measured in the dark or under white light generated by a halogen lamp.
