ABSTRACT
Abstract. Data are presented on the characteristics of the AlGaAs/InGaAs PHEMT with 138 multi-quantum wire (MQWR) channels with 15 nm x 22 nm cross sections. Photoluminescence measurements (PL) clearly resolve first two exciton energy peaks indicating the proper formation of well defined MQWRs. I-V characteristics of the device with 8 pm long gates exhibit good current saturations and pinch off. The zero volt saturation current level is 60 pA and the pinch off voltage is -0.5 V, respectively. The estimated maximum transconductance is 68 mS/mm. 1
1. Introduction Semiconductor quantum wires (QWRs) have been extensively studied, aiming to develop the novel nanoelectronics devices since the excellent performance of QWR FET was predicted [1]. A few successful QWR transistors have been reported using the AlGaAs/GaAs HEMT structures, such as the AlGaAs In-plane-gated (IPG) transistors [2], split-gate HEMTs [3], and Schottky wrap gate (WPG) FETs [4]. Among those the WPG devices are most pioneered to demonstrate even nanoelectronics logic circuits [5]. However, actual device applications are still limited in many reasons. In this paper we turn our focus to the immediate utilization of the 1 -D channels for improving the room temperature characteristics of existing 2-D devices, and propose the AlGaAs/InGaAs PHEMTs with InGaAs MQWR channels. In this device the InGaAs quantum well (QW) plane splits into many 1 -D QWRs, and 1 -D carrier transport is achieved, and a certain improvement of device characteristics, such as the mobility, is expected due to the reduction of the degree of freedom. This paper describes our unique MQWR-PHEMT structure and fabrication steps using the submicron holographic lithography and wet chemical etching technique. Characterization data from AFM, SEM, photoluminescence (PL) measurements, and I-V characteristics of the fabricated MQWR-PHEMT are presented.
