ABSTRACT
Abstract. In this paper, we study the electrical properties (both dc and ac) in hexagonal InN thin films grown on GaAs substrates by rf magnetron sputtering. From the temperature-dependent conductance, it is found that the carrier transport properties of InN thin films are governed by holes trapped at the grain boundaries. The observed negative capacitance effect is attributed to the carrier capture and emission at the InN/GaAs interface states, by aid of a comparative study on an InN thin film grown on sapphire substrate. 1
1. Introduction Recently, much attention has been paid to InN due to its wide range of optoelectronic device applications. However, the research on the electrical properties of the InN thin films mainly concentrates on the Hall measurements, in addition to some reports on background donor-induced high electron concentration, surface charge accumulation, interface characteristics, and superconducting behaviour at very low temperature. In this paper, we present the carrier transport properties and negative capacitance characteristics of the hexagonal InN thin films grown on GaAs substrates.
