First-principles investigations of Ga and As adsorption properties on a GaAs(110) surface

Abstract. We investigated adsorption properties of Ga and As atoms on a GaAs(l 10) surface by using first-principles calculations. It was found that both Ga and As adatoms do not form strong bonds with the substrate atoms, and then diffusion barrier heights are rather low. It was also found that the most stable sites of the adatoms are not the lattice sites. These results suggest that the epitaxial growth mechanism on GaAs(l 10) surface is similar to that on GaAs(l 11)A surface.