ABSTRACT
J Y Y i\ K H Kim1, H J Lee1, M Yang1*, H S Ahn1, C R Cho2, S W Kim3, Y Honda4, M Yamaguchi4, N Sawaki4
departm ent of Applied Sciences, Korea Maritime University, Busan 606-791, Korea
2Busan Branch, Korea Basic Science Institute, Busan 609-735, Korea departm ent of Physics, Andong National University, Andong 760-749,
Korea departm ent of Electronics, Nagoya University, Nagoya 464-8603, Japan
Abstract Mg doped GaN and AlGaN layers were grown by hydrid vapor phase epitaxy (HVPE). Metallic Ga mixed with Mg and (Mg, Al) were used as group III source materials for the growth of GaN:Mg and AlGaN:Mg, respectively. For the crystalline and elemental analysis, double X-ray diffraction (DXRD) and Auger electron spectroscopy (AES) measurements were performed. A luminescence peak at around 380 nm which might be from Mg related recombination center could be observed in cathodoluminescence (CL) spectroscopy. We could also observed, by Hall effect measurement, effect of counter doping by Mg acceptor in GaN:Mg and AlGaN:Mg layers.
