ABSTRACT
Laboratoire de Microstructures et de Microélectronique (L2M)/CNRS, 196 Avenue Henri-Ravéra, BP 107, 92225, Bagneux, France
1. In tro d u c tio n ................................................................................... 372 2. Interdiffusion Under Uniform SiÛ2 E ncapsulation ......................... 376
2.1. Principle....................................................................................... 376 2.2. Influence of the SiC>2 Deposition Technique............................378 2.3. Interdiffusion Enhancement M e c h a n ism ................................384 2.4. Characteristics of the Interdiffused M ateria l............................390 2.5. Interdiffusion M odel....................................................................397 2.6. Advantages Compared to Ion Im p lan ta tio n ............................400
