ABSTRACT
TiN/Al/TiN/Ti lines were formed. SEM micrograph of the 3x3pm2 PZT capacitors for the NVFRAM
is shown in Fig.3.
I CMOS transistor fabrication I I PZT spin coating and annealing at 600°Cl
I sputtcrej SLQj/SQG..dgpflsitiQnJ 1 contact etch I I Al/TiN/Ti deposition and patterning!
