ABSTRACT
R. BRUCHHAUSa, D. PITZERa, R. PRIMIGa, M. SCHREITER3, W. WERSINGa, N. NEUMANN5, N. HESS5, J. VOLLHEIM5, R. KOH LER0, AND M. SIMON4 SIEMENS AG, ZT MF 2, D-81730 Munich, Germany, hDIAS Angewandte Sensorik GmbH, D-01217 Dresden, Germany, CTU Dresden, Institut flir F estkorperelektronik, D-01062 Dresden, dHeimann Optoelectronics GmbH, D-65020 Wiesbaden, Germany
Abstract A planar multi target sputtering approach was used to de posit PbTi03 (PT) and Pb(Zr,Ti)03 (PZT) films on Ti02/Pt bottom electrodes for the use in thin film pyroelectric IR detector arrays. PZT films with a Zr content of 28 at% fPZ28T) exhibited the best pyro electric coefficient of typically 2xl04 Cm"2K"\ The PZ28T films have been used for fabricating a two dimensional 11x6 pixel pyroelectric detector array on Si wafers. The array pixels with a sensitive area of 280 x 280 pm2 have a noise equivalent power NEP of less than 0.7 nW at 1 Hz. It is planned to use the detector array in systems for motion detection.
