ABSTRACT
CHRISTINE DEHM, WALTER HARTNER, GONTHER SCHINDLER, RENATE BERGMANN, BARBARA HASLER, IGOR KASKO,
MARCUS KASTNER, MANUELA SCHIELE, VOLKER WEINRICH and CARLOS MAZURE
Infineon Technologies, Dept. MP E TF, D-81730 Munich, Germany
INTRODUCTION
One of the most promising ferroelectric material for use in nonvolatile
memories is the bismuth layered perovskite SrBi2Ta209 (SBT) 111 When
comparing properties of DRAM, Flash, SRAM and FeRAM, it is obvious that
FeRAMs offers the possibility of an universal RAM with all advantages of
conventional memory types (see Table 1). Especially interesting for mobile
applications is FeRAMs advantage of low voltage/low power behavior at
small cell size and, therefore, low costs together with excellent reliability
properties. Due to these properties, high density FeRAMs (> 1Mb) provide
enormous business potential as replacement of conventional SRAM or Flash
memories. Low density FeRAMs (kb range) are already in production for
smartcard applications.