ABSTRACT
A flow diagram for the sol-gel processing of PZT monoliths and thin-films is illustrated in Figure 2. The precursor used was a complex, formed by reacting oligomeric metal alkoxides or organometallics, and soluble salts in alcohol. The details of the synthesis is given elsewhere.28-29 The complex or stock solution was catalyzed, by the addition of acid or base to initiate hydrolysis and condensation to form an inorganic network composed of metal-oxygen-metal linkages. The stable and partial condensation product was diluted and aged to form a 0.5 M thin-film precursor solution. This solution was spin-cast at 2000 rpm on platinum and sput tered Pt on silicon-nitrided GaAs. The latter was LEC grown semi-insulating GaAs protected with 1000 A sputtered Si3N4. The bottom electrode for the PZT element
was a 1500 A sputtered platinum layer. The films were fired in air for a half hour at 400°C-700°C.
