ABSTRACT

CARLOS MAZURE*, JO H A N N ALSM EIERb, C H R ISTIN E DEHM*, and W O LFG A N G HONLEIN*

‘ Siemens A G , Semiconductor Group, 81541 Munich, Germany; b Siemens Microelectronics Inc., Hopewell Junction, N Y 12533, U SA

The need for higher DRAM densities, for cost effective manufacturing and the price pressure puts the DRAM development on a highly innovative path. The fast pace with which DRAM cell sizes are reduced results in many technology issues. This talk discusses the deep trench cell architecture, its advantages and the main technology innovations that have made the aggressive scaling o f the DRAM cell possible. The issues related to Gbit DRAM s, the new challenges and potential innovations will be presented.