Review of SrBi[sub(2)]Ta[sub(2)][sub(0)]9 Thin Films Capacitor Processing

CHRISTINE DEHM, WALTER HARTNER, GONTHER SCHINDLER, RENATE BERGMANN, BARBARA HASLER, IGOR KASKO,

MARCUS KASTNER, MANUELA SCHIELE, VOLKER WEINRICH and CARLOS MAZURE

Infineon Technologies, Dept. MP E TF, D-81730 Munich, Germany

INTRODUCTION

One of the most promising ferroelectric material for use in nonvolatile

memories is the bismuth layered perovskite SrBi2Ta209 (SBT) 111 When

comparing properties of DRAM, Flash, SRAM and FeRAM, it is obvious that

FeRAMs offers the possibility of an universal RAM with all advantages of

conventional memory types (see Table 1). Especially interesting for mobile

applications is FeRAMs advantage of low voltage/low power behavior at

small cell size and, therefore, low costs together with excellent reliability

properties. Due to these properties, high density FeRAMs (> 1Mb) provide

enormous business potential as replacement of conventional SRAM or Flash

memories. Low density FeRAMs (kb range) are already in production for

smartcard applications.