ABSTRACT
In the past few years, GaAs-GaAIAs hetetrostructures have emerged as a promising system for optoelectronic and microwave device applications. However, because of the strong reaction between AI and oxygen, even trace quantities of oxygen have a dramatic effect on the quality of GaAIAs layers due to the effective introduction of deep-level defects. Hence, photonic devices based on GaAs-GaAIAs suffer from the catastrophic dark line defect formation and rapid degradation. This is a major problem for monolithic integrated circuits and the technology of GaAs-GaAIAs heterostructures on Si substrates. One of the solutions to this problem is to replace GaAIAs by Gao.51 In0.49P lattice matched to GaAs which has a direct energy gap of 1.9 eV.
