B Optimization of Thickness and In Composition of InGaAs Well for 980 nm Lasers

In the biaxially compressed InGaAs quantum well (QW) the normally cubic unit cell deforms elastically, matching to the smaller GaAs lattice in the plane of the QW, while in the plane perpendicular to the QW the unit cell stretches. Such a deformation affects the InGaAs energy band structure.